Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

N.S. Beattie; P. See; G. Zoppi; P.M. Ushasree; M. Duchamp; I. Farrer; V. Donchev; D.A. Ritchie; S. Tomić

doi:10.1109/PVSC.2018.8547630

Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

N.S. Beattie, P. See, G. Zoppi, P.M. Ushasree, M. Duchamp, I. Farrer, V. Donchev, D.A. Ritchie, S. Tomić

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC
Subtitle of host publication	A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC
Publisher	IEEE
Pages	2747-2751
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2018.8547630
Publication status	Published - 29 Nov 2018
Externally published	Yes
Event	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC - Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
Period	10/06/18 → 15/06/18

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10.1109/PVSC.2018.8547630Licence: Unspecified

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Beattie, N. S., See, P., Zoppi, G., Ushasree, P. M., Duchamp, M., Farrer, I., Donchev, V., Ritchie, D. A., & Tomić, S. (2018). Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC: A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC (pp. 2747-2751). IEEE. https://doi.org/10.1109/PVSC.2018.8547630

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title = "Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering",

abstract = "The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.",

author = "N.S. Beattie and P. See and G. Zoppi and P.M. Ushasree and M. Duchamp and I. Farrer and V. Donchev and D.A. Ritchie and S. Tomi{\'c}",

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booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC",

publisher = "IEEE",

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Beattie, NS, See, P, Zoppi, G, Ushasree, PM, Duchamp, M, Farrer, I, Donchev, V, Ritchie, DA & Tomić, S 2018, Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC: A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC. IEEE, pp. 2747-2751, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 10/06/18. https://doi.org/10.1109/PVSC.2018.8547630

Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering. / Beattie, N.S.; See, P.; Zoppi, G. et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC: A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC. IEEE, 2018. p. 2747-2751.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - See, P.

AU - Zoppi, G.

AU - Ushasree, P.M.

AU - Duchamp, M.

AU - Farrer, I.

AU - Donchev, V.

AU - Ritchie, D.A.

AU - Tomić, S.

PY - 2018/11/29

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N2 - The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.

AB - The efficiency of a solar cell can be substantially increased by opening new energy gaps within the semiconductor band gap. This creates additional optical absorption pathways which can be fully exploited under concentrated sunlight. Here we report a new approach to opening a sizeable energy gap in a single junction GaAs solar cell using an array of small InAs QDs that leads directly to high device open circuit voltage. High resolution imaging of individual QDs provides experimentally obtained dimensions to a quantum mechanical model which can be used to design an optimised QD array. This is then implemented by precisely engineering the shape and size of the QDs resulting in a total area (active area) efficiency of 18.3% (19.7%) at 5 suns concentration. The work demonstrates that only the inclusion of an appropriately designed QD array in a solar cell has the potential to result in ultra-high efficiency under concentration.

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Design and fabrication of InAs/GaAs QD based intermediate band solar cells by quantum engineering

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