Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100)

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    The utility of chemical vapor deposition of silicon from silane gas as a potential route to interfaces has been investigated on Pd(100) using low-energy electron diffraction and scanning tunneling microscopy. Initial adsorption at room temperature leads to the formation of amorphous palladium silicide/silicon surface layer. Annealing to 650 K after low silane exposure (< 5 L) results in subsurface diffusion of silicon with concomitant ejection of palladium atoms. Some surface silicide features also remain intact. Larger exposures (>5 L) at room temperature, followed by 650 K anneal, result in formation of a crystalline (Formula presented) silicide reconstruction. This palladium silicide phase is thought to be of (Formula presented) stoichiometry.

    Original languageEnglish
    Pages (from-to)8443-8449
    Number of pages7
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume61
    Issue number12
    DOIs
    Publication statusPublished - 1 Jan 2000

    Fingerprint Dive into the research topics of 'Formation of a palladium-silicon interface by silane chemical vapor deposition on Pd(100)'. Together they form a unique fingerprint.

  • Cite this