High-Performance HD-GAA MOSFETs for Energy-Efficient Smart City Applications

To combat climate change's effects and reduce carbon emissions for smart cities, this paper proposes a novel low-power, energy-efficient Metal Oxide Field Effect Transistor (MOSFETs) for integration into low-power applications. The proposed MOSFET leverages advanced materials and structural configurations to enhance performance and energy efficiency. By incorporating these MOSFETs into smart city infrastructures, such as sensor networks and communication systems, significant reductions in energy consumption can be achieved, thereby contributing to more sustainable urban environments. Gate All Around (GAA) Nanowire MOSFET devices exhibit superior characteristics, such as high electron mobility, low power consumption, and high-switching speed. As a result, they are significantly used in high-performance computing, Internet of Things, Low Power, and Communication applications. This research paper simulates the design of MOSFETs through the TCAD tool. The results achieved demonstrate optimal performance parameters in terms of electrical and digital characteristics. The Leakage current of designed devices are greatly reduced to an order of 10−15 over 10−9 A in comparison to conventional GAA MOSFET, thus enabling these novel devices suitable to be deployed for low power, energy efficient applications.