Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology

Cuili Chen, V Pickert, Maher Al-Greer, Charalampos Tsimenidis, Thillainathan Logenthiran, Xiang Lu Chong, Chunjiang Jia

Research output: Contribution to conferencePaperResearchpeer-review

Abstract

This paper utilizes the network analyser procedure to determine the junction temperature of the insulated gate bipolar transistors (IGBTs) power modules (PMs). The process of detection is based on analysing the characteristic of the impedance for the Gate-Emitter (GE) loop of the IGBT module. Firstly, high frequency sinusoidal signals are injected into the GE loop, then the corresponding reflected data are captured to determine the impedance of the GE loop. After that, the magnitude response of the impedance is monitored to detect any variation in the junction temperature of the IGBT. Presumably, the process of detection is carried out during the idle state of the IGBT; therefore, EMI and noise issue can be avoided. In this test, Dynex 3.3 kV / 100 A IGBT module and Agilent E5071B network analyser are used. Experiential results clearly confirm the feasibility of the proposed procedure for detecting the junction temperature of the IGBT power module. This method can be easily transferred to other applications.
Original languageEnglish
Publication statusPublished - 2018
Event9th International Conference on Power Electronics, Machines and Drives 2018 - Liverpool ACC, Liverpool, United Kingdom
Duration: 17 Apr 201819 Apr 2018
Conference number: 9

Conference

Conference9th International Conference on Power Electronics, Machines and Drives 2018
Abbreviated titlePEMD 2018
CountryUnited Kingdom
CityLiverpool
Period17/04/1819/04/18

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Electric network analyzers
Insulated gate bipolar transistors (IGBT)
Temperature

Cite this

Chen, C., Pickert, V., Al-Greer, M., Tsimenidis, C., Logenthiran, T., Chong, X. L., & Jia, C. (2018). Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology. Paper presented at 9th International Conference on Power Electronics, Machines and Drives 2018, Liverpool, United Kingdom.
Chen, Cuili ; Pickert, V ; Al-Greer, Maher ; Tsimenidis, Charalampos ; Logenthiran, Thillainathan ; Chong, Xiang Lu ; Jia, Chunjiang. / Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology. Paper presented at 9th International Conference on Power Electronics, Machines and Drives 2018, Liverpool, United Kingdom.
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title = "Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology",
abstract = "This paper utilizes the network analyser procedure to determine the junction temperature of the insulated gate bipolar transistors (IGBTs) power modules (PMs). The process of detection is based on analysing the characteristic of the impedance for the Gate-Emitter (GE) loop of the IGBT module. Firstly, high frequency sinusoidal signals are injected into the GE loop, then the corresponding reflected data are captured to determine the impedance of the GE loop. After that, the magnitude response of the impedance is monitored to detect any variation in the junction temperature of the IGBT. Presumably, the process of detection is carried out during the idle state of the IGBT; therefore, EMI and noise issue can be avoided. In this test, Dynex 3.3 kV / 100 A IGBT module and Agilent E5071B network analyser are used. Experiential results clearly confirm the feasibility of the proposed procedure for detecting the junction temperature of the IGBT power module. This method can be easily transferred to other applications.",
author = "Cuili Chen and V Pickert and Maher Al-Greer and Charalampos Tsimenidis and Thillainathan Logenthiran and Chong, {Xiang Lu} and Chunjiang Jia",
year = "2018",
language = "English",
note = "9th International Conference on Power Electronics, Machines and Drives 2018, PEMD 2018 ; Conference date: 17-04-2018 Through 19-04-2018",

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Chen, C, Pickert, V, Al-Greer, M, Tsimenidis, C, Logenthiran, T, Chong, XL & Jia, C 2018, 'Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology' Paper presented at 9th International Conference on Power Electronics, Machines and Drives 2018, Liverpool, United Kingdom, 17/04/18 - 19/04/18, .

Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology. / Chen, Cuili; Pickert, V; Al-Greer, Maher; Tsimenidis, Charalampos; Logenthiran, Thillainathan; Chong, Xiang Lu; Jia, Chunjiang.

2018. Paper presented at 9th International Conference on Power Electronics, Machines and Drives 2018, Liverpool, United Kingdom.

Research output: Contribution to conferencePaperResearchpeer-review

TY - CONF

T1 - Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology

AU - Chen, Cuili

AU - Pickert, V

AU - Al-Greer, Maher

AU - Tsimenidis, Charalampos

AU - Logenthiran, Thillainathan

AU - Chong, Xiang Lu

AU - Jia, Chunjiang

PY - 2018

Y1 - 2018

N2 - This paper utilizes the network analyser procedure to determine the junction temperature of the insulated gate bipolar transistors (IGBTs) power modules (PMs). The process of detection is based on analysing the characteristic of the impedance for the Gate-Emitter (GE) loop of the IGBT module. Firstly, high frequency sinusoidal signals are injected into the GE loop, then the corresponding reflected data are captured to determine the impedance of the GE loop. After that, the magnitude response of the impedance is monitored to detect any variation in the junction temperature of the IGBT. Presumably, the process of detection is carried out during the idle state of the IGBT; therefore, EMI and noise issue can be avoided. In this test, Dynex 3.3 kV / 100 A IGBT module and Agilent E5071B network analyser are used. Experiential results clearly confirm the feasibility of the proposed procedure for detecting the junction temperature of the IGBT power module. This method can be easily transferred to other applications.

AB - This paper utilizes the network analyser procedure to determine the junction temperature of the insulated gate bipolar transistors (IGBTs) power modules (PMs). The process of detection is based on analysing the characteristic of the impedance for the Gate-Emitter (GE) loop of the IGBT module. Firstly, high frequency sinusoidal signals are injected into the GE loop, then the corresponding reflected data are captured to determine the impedance of the GE loop. After that, the magnitude response of the impedance is monitored to detect any variation in the junction temperature of the IGBT. Presumably, the process of detection is carried out during the idle state of the IGBT; therefore, EMI and noise issue can be avoided. In this test, Dynex 3.3 kV / 100 A IGBT module and Agilent E5071B network analyser are used. Experiential results clearly confirm the feasibility of the proposed procedure for detecting the junction temperature of the IGBT power module. This method can be easily transferred to other applications.

M3 - Paper

ER -

Chen C, Pickert V, Al-Greer M, Tsimenidis C, Logenthiran T, Chong XL et al. Junction Temperature Detection for IGBT Power Module Using Network Analyzer Methodology. 2018. Paper presented at 9th International Conference on Power Electronics, Machines and Drives 2018, Liverpool, United Kingdom.