Localization and Detection of Bond Wire Faults in Multi-chip IGBT Power Modules

Cuili Chen, Volker Pickert, Maher Al-Greer, Chunjiang Jia, Chong Ng

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Abstract

Multi-chip Insulated Gate Bipolar Transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift-off is one of the major failure modes. This paper presents a technique to diagnose bond wire lift-off by analyzing the on-state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). The paper describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages.
Original languageEnglish
JournalIEEE Transactions on Power Electronics
Early online date8 Jan 2020
Publication statusE-pub ahead of print - 8 Jan 2020

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Insulated gate bipolar transistors (IGBT)
Wire
Electric potential
Failure modes

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title = "Localization and Detection of Bond Wire Faults in Multi-chip IGBT Power Modules",
abstract = "Multi-chip Insulated Gate Bipolar Transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift-off is one of the major failure modes. This paper presents a technique to diagnose bond wire lift-off by analyzing the on-state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). The paper describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages.",
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Localization and Detection of Bond Wire Faults in Multi-chip IGBT Power Modules. / Chen, Cuili; Pickert, Volker; Al-Greer, Maher; Jia, Chunjiang ; Ng, Chong.

In: IEEE Transactions on Power Electronics, 08.01.2020.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Localization and Detection of Bond Wire Faults in Multi-chip IGBT Power Modules

AU - Chen, Cuili

AU - Pickert, Volker

AU - Al-Greer, Maher

AU - Jia, Chunjiang

AU - Ng, Chong

PY - 2020/1/8

Y1 - 2020/1/8

N2 - Multi-chip Insulated Gate Bipolar Transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift-off is one of the major failure modes. This paper presents a technique to diagnose bond wire lift-off by analyzing the on-state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). The paper describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages.

AB - Multi-chip Insulated Gate Bipolar Transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift-off is one of the major failure modes. This paper presents a technique to diagnose bond wire lift-off by analyzing the on-state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). The paper describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages.

UR - https://ieeexplore.ieee.org/document/8952771

M3 - Article

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

SN - 1941-0107

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