Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method

Cuili Chen, Maher Al-Greer, Volker Pickert, Charalampos Tsimenidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a new technique to detect the junction temperature of Silicon Carbide (SiC) MOSFET devices. The process of detection is based on injecting a high frequency/low amplitude sweep signal into the gate lead of a SiC device during its OFF-state period. A frequency response analysis is carried out to determine the variation in the impedance which is a function of temperature change. The technique is applied first in simulation by the development of a small-signal model of a single-chip SiC device packaged in a TO-247-3 housing. The frequency response is then compared with experimental data obtained from a high-frequency network analyser (Agilent Keysight E5071B). Results demonstrate that simulation and experimental data are comparable thus, on one hand, it validates the proposed OFF state small signal model, and on the other hand, it confirms the effectiveness of the proposed method for detecting the junction temperature of SiC MOSFET devices.

Original languageEnglish
Title of host publication2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages226-230
Number of pages5
ISBN (Electronic)9781509051571
DOIs
Publication statusPublished - 25 Jul 2017
Event3rd IEEE International Future Energy Electronics Conference and ECCE Asia - Kaohsiung, Taiwan, Province of China
Duration: 3 Jun 20177 Jun 2017

Conference

Conference3rd IEEE International Future Energy Electronics Conference and ECCE Asia
Abbreviated titleIFEEC - ECCE Asia 2017
CountryTaiwan, Province of China
CityKaohsiung
Period3/06/177/06/17

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    Chen, C., Al-Greer, M., Pickert, V., & Tsimenidis, C. (2017). Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 (pp. 226-230). [7992447] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IFEEC.2017.7992447