Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method

Cuili Chen; Maher Al-Greer; Volker Pickert; Charalampos Tsimenidis

doi:10.1109/IFEEC.2017.7992447

Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method

Cuili Chen, Maher Al-Greer, Volker Pickert, Charalampos Tsimenidis

SCEDT Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a new technique to detect the junction temperature of Silicon Carbide (SiC) MOSFET devices. The process of detection is based on injecting a high frequency/low amplitude sweep signal into the gate lead of a SiC device during its OFF-state period. A frequency response analysis is carried out to determine the variation in the impedance which is a function of temperature change. The technique is applied first in simulation by the development of a small-signal model of a single-chip SiC device packaged in a TO-247-3 housing. The frequency response is then compared with experimental data obtained from a high-frequency network analyser (Agilent Keysight E5071B). Results demonstrate that simulation and experimental data are comparable thus, on one hand, it validates the proposed OFF state small signal model, and on the other hand, it confirms the effectiveness of the proposed method for detecting the junction temperature of SiC MOSFET devices.

Original language	English
Title of host publication	2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	226-230
Number of pages	5
ISBN (Electronic)	9781509051571
DOIs	https://doi.org/10.1109/IFEEC.2017.7992447
Publication status	Published - 25 Jul 2017
Event	3rd IEEE International Future Energy Electronics Conference and ECCE Asia - Kaohsiung, Taiwan, Province of China Duration: 3 Jun 2017 → 7 Jun 2017

Conference

Conference	3rd IEEE International Future Energy Electronics Conference and ECCE Asia
Abbreviated title	IFEEC - ECCE Asia 2017
Country/Territory	Taiwan, Province of China
City	Kaohsiung
Period	3/06/17 → 7/06/17

Access to Document

10.1109/IFEEC.2017.7992447

https://eprint.ncl.ac.uk/243675

Cite this

Chen, C., Al-Greer, M., Pickert, V., & Tsimenidis, C. (2017). Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 (pp. 226-230). Article 7992447 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IFEEC.2017.7992447

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title = "Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method",

abstract = "This paper presents a new technique to detect the junction temperature of Silicon Carbide (SiC) MOSFET devices. The process of detection is based on injecting a high frequency/low amplitude sweep signal into the gate lead of a SiC device during its OFF-state period. A frequency response analysis is carried out to determine the variation in the impedance which is a function of temperature change. The technique is applied first in simulation by the development of a small-signal model of a single-chip SiC device packaged in a TO-247-3 housing. The frequency response is then compared with experimental data obtained from a high-frequency network analyser (Agilent Keysight E5071B). Results demonstrate that simulation and experimental data are comparable thus, on one hand, it validates the proposed OFF state small signal model, and on the other hand, it confirms the effectiveness of the proposed method for detecting the junction temperature of SiC MOSFET devices.",

author = "Cuili Chen and Maher Al-Greer and Volker Pickert and Charalampos Tsimenidis",

year = "2017",

month = jul,

day = "25",

doi = "10.1109/IFEEC.2017.7992447",

language = "English",

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booktitle = "2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017 ; Conference date: 03-06-2017 Through 07-06-2017",

}

Chen, C, Al-Greer, M, Pickert, V & Tsimenidis, C 2017, Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method. in 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017., 7992447, Institute of Electrical and Electronics Engineers Inc., pp. 226-230, 3rd IEEE International Future Energy Electronics Conference and ECCE Asia, Kaohsiung, Taiwan, Province of China, 3/06/17. https://doi.org/10.1109/IFEEC.2017.7992447

Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method. / Chen, Cuili; Al-Greer, Maher; Pickert, Volker et al.
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 226-230 7992447.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method

AU - Chen, Cuili

AU - Al-Greer, Maher

AU - Pickert, Volker

AU - Tsimenidis, Charalampos

PY - 2017/7/25

Y1 - 2017/7/25

N2 - This paper presents a new technique to detect the junction temperature of Silicon Carbide (SiC) MOSFET devices. The process of detection is based on injecting a high frequency/low amplitude sweep signal into the gate lead of a SiC device during its OFF-state period. A frequency response analysis is carried out to determine the variation in the impedance which is a function of temperature change. The technique is applied first in simulation by the development of a small-signal model of a single-chip SiC device packaged in a TO-247-3 housing. The frequency response is then compared with experimental data obtained from a high-frequency network analyser (Agilent Keysight E5071B). Results demonstrate that simulation and experimental data are comparable thus, on one hand, it validates the proposed OFF state small signal model, and on the other hand, it confirms the effectiveness of the proposed method for detecting the junction temperature of SiC MOSFET devices.

AB - This paper presents a new technique to detect the junction temperature of Silicon Carbide (SiC) MOSFET devices. The process of detection is based on injecting a high frequency/low amplitude sweep signal into the gate lead of a SiC device during its OFF-state period. A frequency response analysis is carried out to determine the variation in the impedance which is a function of temperature change. The technique is applied first in simulation by the development of a small-signal model of a single-chip SiC device packaged in a TO-247-3 housing. The frequency response is then compared with experimental data obtained from a high-frequency network analyser (Agilent Keysight E5071B). Results demonstrate that simulation and experimental data are comparable thus, on one hand, it validates the proposed OFF state small signal model, and on the other hand, it confirms the effectiveness of the proposed method for detecting the junction temperature of SiC MOSFET devices.

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U2 - 10.1109/IFEEC.2017.7992447

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M3 - Conference contribution

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SP - 226

EP - 230

BT - 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 3rd IEEE International Future Energy Electronics Conference and ECCE Asia

Y2 - 3 June 2017 through 7 June 2017

ER -

Chen C, Al-Greer M, Pickert V, Tsimenidis C. Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method. In 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 226-230. 7992447 doi: 10.1109/IFEEC.2017.7992447

Signal processing technique for detecting chip temperature of SiC MOSFET devices using high frequency signal injection method

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