This paper proposes a measurement technique applied to an unbiased multi-chip power module that is able to distinguish between junction temperature variation and bondwire lift-off. Compared with traditional approaches, the proposed technique requires only one test to monitor and discriminate these two conditions. The proposed technique relies upon the injection of high frequency/low power signals into the Gate-Emitter terminals of an IGBT and then analysing the corresponding frequency response of the Gate-Emitter circuit. It is verified that the imaginary part of the Gate-Emitter impedance (ZGE, Imag) changes in opposite directions. A high number of bondwire lift-offs leads to an increase of ZGE, Imag, whereas junction temperature rise leads to a drop in ZGE, Imag. Furthermore, it is shown that the real part of Gate-Emitter impedance ZGE, Real increases with both increased number of bondwire lift-offs and rise in junction temperature. In this paper, a small-signal model for the Gate-Emitter circuit of a 3.3 kV / 100 A IGBT power module is developed and its frequency response is ZGE, Real increases with both increased number of bondwire lift-offs and rise in junction temperature. In this paper, a small-signal model for the Gate-Emitter circuit of a 3.3 kV / 100 A IGBT power module is developed and its frequency response is examined and analysed with SaberRD. Furthermore, practical tests are also carried out with a network analyser.
|Publication status||Published - 2018|
|Event||10th International Conference on Integrated Power Electronics - Stuttgart, Germany|
Duration: 20 Mar 2018 → 22 Mar 2018
|Conference||10th International Conference on Integrated Power Electronics|
|Abbreviated title||CIPS 2014|
|Period||20/03/18 → 22/03/18|
Chen, C., Pickert, V., Al-Greer, M., Tsimenidis, C., Logenthiran, T., Chong, X. L., Ng, C., & Jai, C. (2018). Signal Sweeping Technique to Decouple the Influence of Junction Temperature and Bondwire Lift-off in Condition Monitoring for Multichip IGBT Modules. Paper presented at 10th International Conference on Integrated Power Electronics, Stuttgart, Germany.