Silane adsorption on Pd(100) - a low-temperature RAIRS study

Christopher Ennis, S. A. Morton, L. Sun, S. P. Tear, E. M. McCash

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    Silane adsorption and reaction on Pd(100) have been investigated between 23-80 K by reflection-absorption infrared spectroscopy (RAIRS). Exposure to a silane/argon mixture at a substrate temperature of 23 K results in physisorbed islands of silane with argon matrix isolated silane in subsequent layers. At a substrate temperature of 70 K the silane forms a uniform physisorbed layer on the surface which undergoes dissociative chemisorption at ~78 K. On Pd(100) a surface stabilised SiH moiety is formed; direct adsorption at 80 K leads to the formation of islands of SiH with overlayers of physisorbed molecular silane. The SiH species is stable to 200 K at which point complete dissociation occurs.

    Original languageEnglish
    Pages (from-to)217-224
    Number of pages8
    JournalChemical Physics Letters
    Issue number3-4
    Publication statusPublished - 30 Apr 1999


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