Sol-gel processing of tellurium oxide thin films for optical data storage application

S. N B Hodgson, L. Weng, S. M. Tracey

    Research output: Contribution to journalConference articleResearchpeer-review

    1 Citation (Scopus)

    Abstract

    The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.

    Original languageEnglish
    JournalIEE Colloquium (Digest)
    Issue number412
    Publication statusPublished - 1 Jan 1998
    Event1998 IEE Colloquium on Sol-Gel Materials for Device Applications - London, UK
    Duration: 13 May 199813 May 1998

    Fingerprint

    tellurium
    data storage
    gels
    oxides
    thin films
    routes
    melting
    crystallization
    temperature

    Cite this

    @article{b38b985c69714abdab3f68c1f8b6a80d,
    title = "Sol-gel processing of tellurium oxide thin films for optical data storage application",
    abstract = "The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.",
    author = "Hodgson, {S. N B} and L. Weng and Tracey, {S. M.}",
    year = "1998",
    month = "1",
    day = "1",
    language = "English",
    journal = "IEE Colloquium (Digest)",
    issn = "0963-3308",
    publisher = "Institute of Electrical Engineers",
    number = "412",

    }

    Sol-gel processing of tellurium oxide thin films for optical data storage application. / Hodgson, S. N B; Weng, L.; Tracey, S. M.

    In: IEE Colloquium (Digest), No. 412, 01.01.1998.

    Research output: Contribution to journalConference articleResearchpeer-review

    TY - JOUR

    T1 - Sol-gel processing of tellurium oxide thin films for optical data storage application

    AU - Hodgson, S. N B

    AU - Weng, L.

    AU - Tracey, S. M.

    PY - 1998/1/1

    Y1 - 1998/1/1

    N2 - The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.

    AB - The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.

    UR - http://www.scopus.com/inward/record.url?scp=0031618061&partnerID=8YFLogxK

    M3 - Conference article

    JO - IEE Colloquium (Digest)

    JF - IEE Colloquium (Digest)

    SN - 0963-3308

    IS - 412

    ER -