The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.
|Journal||IEE Colloquium (Digest)|
|Publication status||Published - 1 Jan 1998|
|Event||1998 IEE Colloquium on Sol-Gel Materials for Device Applications - London, UK|
Duration: 13 May 1998 → 13 May 1998