Sol-gel processing of tellurium oxide thin films for optical data storage application

S. N B Hodgson; L. Weng; S. M. Tracey

Sol-gel processing of tellurium oxide thin films for optical data storage application

S. N B Hodgson, L. Weng, S. M. Tracey

Research output: Contribution to journal › Conference article › peer-review

Abstract

The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.

Original language	English
Journal	IEE Colloquium (Digest)
Issue number	412
Publication status	Published - 1 Jan 1998
Event	1998 IEE Colloquium on Sol-Gel Materials for Device Applications - London, UK Duration: 13 May 1998 → 13 May 1998

Cite this

@article{b38b985c69714abdab3f68c1f8b6a80d,

title = "Sol-gel processing of tellurium oxide thin films for optical data storage application",

abstract = "The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.",

author = "Hodgson, {S. N B} and L. Weng and Tracey, {S. M.}",

year = "1998",

month = jan,

day = "1",

language = "English",

journal = "IEE Colloquium (Digest)",

issn = "0963-3308",

publisher = "Institute of Electrical Engineers",

number = "412",

note = "1998 IEE Colloquium on Sol-Gel Materials for Device Applications ; Conference date: 13-05-1998 Through 13-05-1998",

}

TY - JOUR

T1 - Sol-gel processing of tellurium oxide thin films for optical data storage application

AU - Hodgson, S. N B

AU - Weng, L.

AU - Tracey, S. M.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.

AB - The feasibility of producing tellurium oxide and suboxide thin films by a low-cost sol-gel processing route is demonstrated. The sol-gel derived material was characterized to possess suitable properties, notably low crystallization and melting temperatures, making it suitable for phase change optical memory application.

UR - http://www.scopus.com/inward/record.url?scp=0031618061&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031618061

SN - 0963-3308

JO - IEE Colloquium (Digest)

JF - IEE Colloquium (Digest)

IS - 412

T2 - 1998 IEE Colloquium on Sol-Gel Materials for Device Applications

Y2 - 13 May 1998 through 13 May 1998

ER -

Sol-gel processing of tellurium oxide thin films for optical data storage application

Abstract

Other files and links

Fingerprint

Cite this