Temperature Estimation of SiC Power Devices Using High Frequency Chirp Signals

Xiang Lu, Volker Pickert, Maher Al-Greer, Cuili Chen, Xiang Wang , Charalampos Tsimenidis

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)
103 Downloads (Pure)


Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the gate-source impedance are injected into the gate of a discrete SiC device. The gate-source voltage frequency response is captured and then processed using the fast Fourier transform. The data is then accumulated and displayed over the chirp frequency spectrum. Results show a linear relationship between the processed gate-source voltage and the junction temperature. The effectiveness of the proposed TSEPs is demonstrated in a laboratory scenario, where chirp signals are injected in a stand-alone biased discrete SiC module, and in an in-field scenario, where the TSEP concept is applied to a MOSFET operating in a DC/DC converter.
Original languageEnglish
Article number4912
Issue number16
Publication statusPublished - 11 Aug 2021

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